Table 1 Summary of SiNW arrays with varied diameters and porosities
From: Thermal conductivity in porous silicon nanowire arrays
Diameter control | Porosity control | |
|---|---|---|
Set 1 | Nanosphere lithography | Etching method and doping concentration |
davg≈ 300 to 350 nm | Nonporous: DRIE | |
VFDRIE = 21% to 23% | Low porosity: Ag/Au MACE | |
VFMACE = 45% to 60% | Moderate porosity: Ag MACE, lightly doped | |
High porosity: Ag MACE, heavily doped | ||
Set 2 | Silver salts | MACE etchant solution |
davg≈ 130 nm | Low porosity, 0.15 M H2O2 | |
VF = 26% to 35% | High porosity, 1.2 M H2O2 |