The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum well

Table 1 Parameters of the binary compounds used for the calculation

Material	GaAs^a	InAs^a	GaN^b	InN^b
Electron effective mass m^*(m₀)	0.067	0.026	0.15	0.14
Dielectric constant	12.53	14.55	10.69^c	7.46^d
Energy gap E_g (eV)	1.420	0.417	3.299	1.94

^aVurgaftman et al. [33], ^bVurgaftman and Meyer [34], ^cChow et al. [35], and ^dGavrilenko and Wu [36].