Figure 5From: Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pitsRim-bound islands for higher pit periods. (a,b,c,d) AFM images in derivative mode of islands grown around the pits taken from fields with pit spacing of 1 μm (a,b), 1.5 μm (c), and 5 μm (d). Panels (e,f) show one representative pit decorated with islands that is indicated by the dotted square in (d) in a surface angle image and in a 3D image.Back to article page