Figure 1

Theoretical PL spectra, at 2 K, for unstrained p-doped GaAs/In _x Ga _{1− x} As _{1− y} N _y SL. With x = 3%, y = 1.3%, barrier width, d₁ = 3 nm, and well width, d₂ = 3 nm. The acceptor concentration is varied for N _A  = 1 × 10¹⁸ cm⁻³ (solid line), 2 × 10¹⁸ cm⁻³ (dashed line), 4 × 10¹⁸ cm⁻³ (dotted line), and 6 × 10¹⁸ cm⁻³ (dot-dashed line).