Figure 9From: Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteResistance states. (a) The resistance states with DC cycles of the S1 and S2 devices. (b) AC endurances of approximately 105 cycles are observed for both devices. However, the Ge0.5Se0.5 devices (with more Ge content) are more stable.Back to article page