Figure 1From: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriersParameters used in growing a single InGaN QD and GaN barrier period in sample E. Regions indicating the different growth periods: I, InGaN QD; II, growth interruption; III, protective GaN barrier; IV, temperature ramping and gas switching; V, GaN barrier; VI, temperature decreasing and gas switching; VII, InGaN QD.Back to article page