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Figure 2 | Nanoscale Research Letters

Figure 2

From: Semiconductor nanomembranes: a platform for new properties via strain engineering

Figure 2

Optical-microscope images of a (110) Si/Si 0.91 Ge 0.09 /Si NM. The arrays of holes visible in the images are used to enhance etchant access. (a) Partially released membrane. (b) Membrane released in place. (c) Wet transfer to new Si host. The ripples visible in (b) smooth out when the membrane bonds to a new substrate surface. Schematic illustrations of the cross section of the multilayered structure at these stages of release and transfer are shown above the optical images. Images courtesy of Shelley Scott, ref[20].

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