Figure 5
From: Semiconductor nanomembranes: a platform for new properties via strain engineering
Fabrication sequence of mixed-crystal-orientation nanomembrane via membrane transfer and overgrowth, schematically illustrated in cross section. (a) The original SOI (110) substrate, (b) after lithography and RIE, (c) after removal of the buried oxide in HF, (d) after transfer and bonding to a bulk Si (001) substrate, and (e) after CVD growth of Si. The much faster growth rate of Si on Si(001) relative to that on Si(110) allows the holes to fill. The image at the right is after step (d). (f) Top-view optical image of a sample including (001)- and (110)-oriented regions.