Figure 3From: Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopySKM, CAFM, and SCM images (left column) and 3D views (right column) of BPA-etched GeSi QR. (a) Height image measured simultaneously with the CPD image, (b) CPD image obtained at an AC modulation of 2 V and a lift height of 10 nm. (c) Current image measured at a sample bias of −1 V. (d) dC/dV amplitude image obtained by applying 2 V AC modulation to the sample. Each scale bar is 50 nm.Back to article page