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Figure 4 | Nanoscale Research Letters

Figure 4

From: Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy

Figure 4

Schematic energy band diagrams of the interface. Between the AFM tip and the wetting layer (a), between the AFM tip and the QR's rim (b), and between the AFM tip and the QRs' central hole (c). The Schottky barrier height at the interface is termed as ΦB,WL for the wetting layer, ΦB,Rim for the QR's rim, and ΦB,Center for the QRs' central hole, respectively.

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