Figure 3From: Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performanceHistogram of the number of active As atoms in the Si NWs. Si NWs (3 nm wide, 3 nm high, and 10 nm long) with 1-nm-thick oxide are implanted with As (0.5 keV, 1 × 1015 cm−2) and annealed at 1,000°C with a hold time of 0 s. Two hundred different random seeds were calculated.Back to article page