Figure 3From: Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn dopingToF-SIMS depth profile of elements Ti, Al, AlO, TiO, O, Ga, and As. These are the depth profile of the elements of the ALD TiO2/Al2O3 dielectric stack on doped (1017 to 1018 cm-3) and undoped epi-GaAs structures.Back to article page