Figure 3

Growth kinetics of poly-Si _{1- x} Ge _x oxidation and migration characteristics of Ge drew drops. (a) Growth kinetics of polycrystalline Si_1-xGe _x , single-crystalline Si, and Si₃N₄ oxidation at 900°C in H₂O ambient. (b) The oxide thickness between the SiGe shell and the bottom of the lowest Ge dew drop as a function of additional oxidation time after Ge QDs encountering Si substrate. (c) The oxide thickness between the Ge dew drops as a function of the increased thickness of the oxide layer over the Si substrate. The error bars were determined by the extensive observation on more than 25 QDs for each data point.