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Table 1 Temperatures and gas flows used for the growth of Zn ₃ N ₂ on 1.8 nm Au/Si(001)

From: Zn₃N₂ nanowires: growth, properties and oxidation

	T_G(°C)	NH₃(sccm)	H₂(sccm)
CVD1066	700	250	-
CVD1065	600	250	-
CVD1070	500	450	50
CVD1069	500	450	-
CVD1072	500	250	-
CVD1068	500	50	-

The temperature ramp was 10°C/min, and 0.9 g of Zn was used in all cases. Upon reaching T_G = 500°C to 700°C, the same flow of NH₃ and H₂ was maintained for a further 60 min; after which, the reactor was allowed to cool down slowly for at least 30 min without changing the gas flows.

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