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Table 1 Performance characteristics of the photovoltaic devices

From: Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Device

Short-circuit current (mA/cm2)

Open-circuit voltage (V)

Fill factor

Power conversion efficiency (%)

Pristine

8.9757

0.8286

0.6124

4.5545

0.2 M precursor

9.9191

0.8306

0.6226

5.1293

0.4 M precursor

11.4798

0.8318

0.6057

5.7841

0.6 M precursor

12.5483

0.8360

0.5976

6.0196

0.8 M Precursor

7.8613

0.7150

0.5636

3.1679

  1. Devices: ITO/PEDOT:PSS/ICBA:P3HT/Al and ITO/ZnO (0.4, 0.6, 0.8 M precursor)/PEDOT:PSS/CBA:P3HT/Al.

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