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Table 1 Performance characteristics of the photovoltaic devices

From: Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Device Short-circuit current (mA/cm2) Open-circuit voltage (V) Fill factor Power conversion efficiency (%)
Pristine 8.9757 0.8286 0.6124 4.5545
0.2 M precursor 9.9191 0.8306 0.6226 5.1293
0.4 M precursor 11.4798 0.8318 0.6057 5.7841
0.6 M precursor 12.5483 0.8360 0.5976 6.0196
0.8 M Precursor 7.8613 0.7150 0.5636 3.1679
  1. Devices: ITO/PEDOT:PSS/ICBA:P3HT/Al and ITO/ZnO (0.4, 0.6, 0.8 M precursor)/PEDOT:PSS/CBA:P3HT/Al.