Figure 1From: Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputteringIon bombardment of a sinusoidal wave geometry. Ion flux density, J, incident at an angle θ with respect to mean surface plane is shown. Local surface gradient, tan α = ∂ h ∂ x . Sinusoidal wave is described by h = h0 sin(2πx/λ), where λ is the wavelength of the ripples, and h0 is the amplitude.Back to article page