Figure 6From: Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputteringLine profiles extracted from the AFM images of ion-exposed samples at 72.5°. Different ion fluences: (a) 1 × 1017, (b) 2 × 1017, (c) 5 × 1017, (d) 10 × 1017, (e) 15 × 1017, and (f) 20 × 1017 ions cm-2, respectively. Arrow indicates the direction of ion beam onto the surface.Back to article page