Figure 3From: Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalystsThe GaN/In x Ga1-xN COHN. (a) SEM images of COHN nanowires. (b) Cross-sectional TEM images of corner area of COHN nanowire. (c) Cross-sectional TEM images of flat area of COHN nanowire (d) The indium composition in InGaN shells as a function of growth temperature. (e) The normalized PL spectra of COHN grown at 600°C to 750°C.Back to article page