Figure 1From: Growth of single-crystalline cobalt silicide nanowires and their field emission propertySEM images of as-synthesized nanowires. At silicon substrate temperatures of (a) 750°C ~ 800°C, (b) 800°C ~ 850°C, (c) 850°C ~ 880°C, and (d) 880°C ~ 900°C, respectively.Back to article page