Figure 2
From: High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
The characteristics of the field-effect transistor based on an individual InSb nanowire. (a) Ids versus Vds characteristic curve under different gate voltage. The inset shows the SEM image of FET based on a single InSb nanowire. (b) Ids versus Vgs characteristic curve at Vds = 5 V. The carrier concentration of 3.6 × 1017 cm−3 and mobility of 215.25 cm2 V−1 s−1 are obtained.