Figure 5From: Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memoryTCAD simulation. (a) FN programming. VFG = VCG × αG = 14.9 V. (b) BBHE programming. VFG = VCG × αG = 5.95 V. Both use the same voltage drop. (c) Electric field comparison of FN and BBHE programming.Back to article page