Table 1 Physical parameters for lifetime estimation based on our simple calculation model and PC1D
From: Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
Symbol | Parameter | Silicon nanowire | Bulk silicon |
|---|---|---|---|
d, W | Length, thickness | 10 μm | 190 μm |
Ε | Dielectric constant | 11.4 | 11.4 |
Eg | Energy gap (eV) | 1.12 | 1.12 |
χ | Electron affinity (eV) | 4.05 | 4.05 |
Dt | Trap level | 0 | 0 |
τe0, τh0 | Carrier lifetime | 0.05 to 1.5 μs | 1 ms |
μ e | Electron mobility (cm2/(Vs)) | 1,104 | 1,104 |
μ h | Hole mobility (cm2/(Vs)) | 424.6 | 424.6 |
N A | Accepter concentration (cm−3) | 1 × 1016 | 1 × 1016 |