Figure 6From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsFitted I-V characteristics of PF and NF devices with IrO x /TaO x /W structure. (a) LRS of NF devices fitted ohmic behavior. (b) HRS for the NF devices were consistent with Schottky behavior. (c) Both LRS and HRS of the PF devices show a TC-SCLC transport mechanism.Back to article page