Figure 8From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsRESET phenomena for the PF and NF devices. RESET currents of NF and PF devices containing (a) AlOx, (b) GdOx, (c) HfOx, and (d) TaOx switching materials with an IrOx/high-κx/W structure.Back to article page