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Figure 2 | Nanoscale Research Letters

Figure 2

From: Structure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments

Figure 2

SEM micrographs of porous versus nonporous SiNWs. Cross-sectional SEM images of (a) porous Si NWs versus (b) nonporous SiNWs. Both are etched for 6 min. In both cases, the length of the SiNWs is small (about 1 μm). The porous SiNWs are fabricated on p+-type Si (resistivity 005 Ω·cm), while the nonporous SiNWs are fabricated on p-type Si (resistivity 1 to 10 Ω·cm). Due to their small length, there is no clear evidence of the presence of an interfacial porous layer between the SiNWs and the Si substrate.

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