- Nano Express
- Open Access
Fabrication and photoresponse of ZnO nanowires/CuO coaxial heterojunction
© Wu et al.; licensee Springer. 2013
- Received: 25 July 2013
- Accepted: 11 September 2013
- Published: 17 September 2013
The fabrication and properties of n-ZnO nanowires/p-CuO coaxial heterojunction (CH) with a photoresist (PR) blocking layer are reported. In our study, c-plane wurtzite ZnO nanowires were grown by aqueous chemical method, and monoclinic CuO (111) was then coated on the ZnO nanowires by electrochemical deposition to form CH. To improve the device performance, a PR layer was inserted between the ZnO buffer layer and the CuO film to serve as a blocking layer to block the leakage current. Structural investigations of the CH indicate that the sample has good crystalline quality. It was found that our refined structure possesses a better rectifying ratio and smaller reverse leakage current. As there is a large on/off ratio between light on and off and the major light response is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector.
Because of its wide band gap (3.37 eV) and large exciton binding energy (60 meV), zinc oxide (ZnO) is one of the most promising materials for optoelectronic device applications in the ultraviolet (UV) region[1–3]. ZnO thin films can be produced by several techniques, such as reactive evaporation, molecular beam epitaxy (MBE)[4–6], magnetron sputtering technique, pulsed laser deposition (PLD), sol–gel technique, chemical vapor deposition, electrochemical deposition, and spray pyrolysis. In recent years, ZnO-based heterojunctions have been extensively studied for application as UV photodetectors. These ZnO-based heterojunctions can be classified into two categories: thin film heterojunction (FH) and coaxial heterojunction (CH). ZnO/SiC, ZnO/NiO, and ZnO/GaN belong to the category of thin film heterojunction which had been shown to possess good photoresponse in the UV region. On the other hand, p-copper oxide (CuO)/n-ZnO nanowires (NWs), which belong to the category of coaxial heterojunction, were found to have large enhancement in photocurrent under UV illumination.
ZnO NW possesses many attractive advantages over ZnO thin film. The light trapping ability and great photosensitivity owing to the presence of an oxygen-related hole-trap state at the ZnO NW surface make ZnO NW-based heterojunction very attractive for use as a photodetector. Due to the good optical properties of ZnO NWs and the strong absorption of CuO in the visible region, ZnO NW/CuO heterojunction has drawn much interest these days. A wide variety of processes, including sputtering method, sol–gel technique, thermal oxidation, and modified hydrothermal method, have been developed to fabricate ZnO/CuO CH. These works demonstrated that good rectification ratio and good photoresponse can be obtained with ZnO/CuO coaxial heterojunctions. However, in coating a CuO layer on ZnO nanowires, it is unavoidable that part of the CuO will be in contact with the ZnO buffer layer, and as there are two parallel channels for current conduction (one from the ZnO buffer layer to the CuO layer, and the other from ZnO nanowires to the CuO layer), it is not possible to take full advantage of the benefits that are associated with using the ZnO nanowires in making the photodetector[14, 18, 19]. In this letter, we report fabrication and characterization of a ZnO nanowire/CuO heterojunction photodetector with a photoresist blocking layer. In our study, the ZnO NWs were grown by hydrothermal method, and the sample was then spin-coated with a photoresist layer before the growth of the CuO layer. Structural investigations of the coaxial heterojunction indicate that the sample has good crystalline quality. It was found that our refined structure possesses a better rectifying ratio and a smaller reverse leakage current which are 110 and 12.6 μA, respectively. With the increase of reverse bias from 1 to 3 V, the responsivity increases from 0.4 to 3.5 A W−1 under a 424-nm light illumination.
ZnO NW arrays were grown on an indium tin oxide (ITO)-coated glass substrate by aqueous chemical method as reported in. The reaction solution was 0.05 M Zn(NO3)2 · 6H2O mixed with 0.05 M C6H12N4. The growth temperature and time are 90°C and 2 h, respectively. After the growth, the sample was baked at 100°C for complete dryness. In order to provide electrical blocking between the ZnO buffer layer and the CuO film, a layer of photoresist (DSAM) was spin-coated on ZnO NW arrays as a blocking layer. To remove the PR on top of the ZnO NWs, acetone was dropped onto the sample while it is spinning in a spin coater. With this method, the upper part of the nanowires is not covered by the PR but the bottom part of the nanowires and the ZnO buffer layer are still coated with PR, thus ensuring that the CuO layer which will be grown later will not be in contact with the ZnO buffer layer. Copper was then coated on ZnO NWs by ECD and was then annealed at 400°C for 2 h with the oxygen flow offset at 20 sccm. Finally, a 100-nm silver layer was deposited onto the CuO layer by thermal evaporation to serve as an ohmic contact for electrical measurements. The morphology of ZnO/CuO was examined using a HITACHI S-2400 scanning electron miscroscope (SEM; Chiyoda-ku, Japan). The crystal structure was examined using a transmission electron microscope (TEM; Philips Tecnai G2 F20 FEG-TEM) located at the Department of Physics, National Taiwan University, and by X-ray diffraction (PANalytical X’Pert PRO, Almelo, The Netherlands). Optical transmission spectra were measured using a JASCO V-570 UV/VIS/NIR spectrophotometer (Easton, MD, USA). Xenon arc lamp (LHX150 08002, Glasgow, UK) and iHR-320 monochromator (HORIBA Scientific, Albany, NY, USA ) were used in the photoresponse measurement, and the current–voltage (I-V) curves were measured using Keithley 236 and 4200-SCS (Cleveland, OH, USA).
Results and discussion
In summary, PR-inserted ZnO nanowires/CuO coaxial heterojunctions were fabricated by a low-cost and simple method. Structural studies demonstrated that the nanostructure has good crystalline quality. Optical and electrical characteristics were studied by transmission spectrum, current–voltage curve, and photoresponse measurements, and it is found that adding a PR blocking layer can effectively reduce the reverse bias leakage current and enhance the rectifying ratio. For our sample, the turn-on voltage is 1.7 V, the rectifying ratio between 3 and −3 V is 110, and the responsivity is 3.5 A W−1 at a reverse bias of 3 V in the visible region. As there is a large on/off ratio between light on and off and the light response is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector.
This work was funded by the National Science Council of Taiwan, Republic of China (grant number NSC 100-2112-M-002-017-MY3).
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