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Figure 4 | Nanoscale Research Letters

Figure 4

From: Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

Figure 4

Current–voltage characteristics for various electrode pairs on the 521-nm-diameter bismuth nanowire measured at various temperatures. (a) 300, (b) 250, (c) 200, (d) 150, (e) 100, (f) 50, and (g) 4.2 K. (h) Temperature dependence of the electrical resistance evaluated from the I-V curves. The inset of (h) shows the fabricated sample used for the measurement.

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