Table 2 Data comparison in published literature
From: TaO x -based resistive switching memories: prospective and challenges
Device structure | Device size (μm2) | Set/reset voltage (V) | Current compliance (μA) | Retention (s) | Resistance ratio | Endurance (cycles) |
---|---|---|---|---|---|---|
W/TiO x /TaO x /TiN [41] | 0.15 × 0.15 | 3.0/-3.0 | 80 | >3 h, 85°C | 100 | 104 |
0.5 × 0.5 | -1/+0.8 | 80/150 | >107 | ~10 | 109 | |
Pt/Ta2O5-x/TaO2-x/Pt [31] | 50 × 50-0.03 × 0.03 | -2.0/+2.0 | 40-200 | 10 years, 85°C | ~10 | 1012 |
Ru/Ta2O5/TiO2/Ru [137] | 4 × 4 | +2.7/-1.0 | ~100 | >106 | ~50 | 106 |
~0.4 × 0.4-0.03 × 0.03 | 1.0/-1.5 | 40, 200 | >104, 200°C | ~100 | 108 | |
Hf, Ti, Ta/HfO2/TiN [85] | 0.04 × 0.04 | +1.8/-3 | 100 | >104, 200°C | ~10 | 1010 |
TiN/Hf/HfO2/TiN [139] | 0.01 × 0.01 | ±0.5 | <80 | 105, 200°C | ~100 | 5 × 107 |
Pt/ZrO x /HfO x /TiN [83] | 0.05 × 0.05 | 0.6/-1.5 | 50 | 105, 125°C | ~100 | 106 |
TiN/WO x /TiN [140] | 0.06 × 0.06 | -1.4/+1.6 | 400 | 2 × 103 h, 150°C | ~10 | 106 |