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Table 2 Data comparison in published literature

From: TaO x -based resistive switching memories: prospective and challenges

Device structure

Device size (μm2)

Set/reset voltage (V)

Current compliance (μA)

Retention (s)

Resistance ratio

Endurance (cycles)

W/TiO x /TaO x /TiN [41]

0.15 × 0.15

3.0/-3.0

80

>3 h, 85°C

100

104

Ir or Pt/Ta2O5-δTa2-β/Pt [109, 120]

0.5 × 0.5

-1/+0.8

80/150

>107

~10

109

Pt/Ta2O5-x/TaO2-x/Pt [31]

50 × 50-0.03 × 0.03

-2.0/+2.0

40-200

10 years, 85°C

~10

1012

Ru/Ta2O5/TiO2/Ru [137]

4 × 4

+2.7/-1.0

~100

>106

~50

106

TiN/Ti/HfO x /TiN [16, 138]

~0.4 × 0.4-0.03 × 0.03

1.0/-1.5

40, 200

>104, 200°C

~100

108

Hf, Ti, Ta/HfO2/TiN [85]

0.04 × 0.04

+1.8/-3

100

>104, 200°C

~10

1010

TiN/Hf/HfO2/TiN [139]

0.01 × 0.01

±0.5

<80

105, 200°C

~100

5 × 107

Pt/ZrO x /HfO x /TiN [83]

0.05 × 0.05

0.6/-1.5

50

105, 125°C

~100

106

TiN/WO x /TiN [140]

0.06 × 0.06

-1.4/+1.6

400

2 × 103 h, 150°C

~10

106

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