Figure 4From: Charge transport mechanisms and memory effects in amorphous TaN x thin filmsEDXS and micro-Raman spectrum of TaN x deposited on Si. (a) EDXS spectrum. The presence of nitrogen verifies the formation of a-TaN, and the concentration of oxygen is lower than the detection limit (few wt. %). (b) Raman spectrum of TaN x on Si. The broad peaks indicate the amorphous character of the film.Back to article page