Figure 6
Atomically resolved STM image of the manganese silicide NW and its tunneling current-voltage properties. (a) Atomically resolved STM image (10 × 10 nm2) of an ultrafine manganese silicide NW grown on the Si(110) surface and (b) the scanning tunneling spectra measured on top of the NW showing semiconducting characteristics with a bandgap of approximately 0.8 eV. The red and blue curves were obtained on two different positions on the NW.