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Table 1 Deposition parameters of different materials

From: Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

Materials

Target/granules

Methods

Vacuum (Torr)

Ar gas (SCCM)

Power (Watt)

Deposition rate

W

W target

RF sputtering

1 × 10-5

25

150

12 nm/min

GeO x

Ge target

RF sputtering

2 × 10-5

25

50

5.3 nm/min

Cu

Cu granules

Thermal evaporator

8 × 10-6

-

-

2-3 Å/s

Al

Al granules

Thermal evaporator

8 × 10-6

-

-

2-3 Å/s

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