Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

Table 2 Structures of the cross-point resistive switching memory devices

Devices	BE ~ 200 nm	Switching layer (10 nm)	TE
			Cu ~ 40 nm	Al ~ 160 nm
S1	W	GeO_x	√	√
S2	W	GeO_x	×	√