Figure 1
From: Electronic structure modulation for low-power switching
Device structure and operating principle of an electronic structure modulation transistor. (a) The channel consists of a 1-nm wide hydrogenated zigzag graphene nanoribbon with edge roughness. (b) The channel is side-gated to create an electric field in the width direction. Gate dielectric surrounds the channel and is not shown for clarity. (c) For such a ribbon, a near-midgap state with a small bandwidth is observed which can be modulated by the gate-induced electric field (left = 0 V/nm electric field, middle = 0.2 V/nm electric field, right = zoomed bandwidth comparison for the two electric fields). (d) The bandwidth of the near-midgap state is linearly dependent on the gate voltage [8].