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Figure 4 | Nanoscale Research Letters

Figure 4

From: Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

Figure 4

Statistical distribution of device parameters and the calculated correlation between the energy versus sample temperature. (a) LRS resistance (measured at 0.3 V), (b) RESET voltage, and (c) RESET current statistics at different temperatures. (d) Statistics on energy consumption during the RESET process as calculated. Here, the small square in the middle of the large square is the average mean value of the device parameters, and the large square indicates the distribution factors of 75% (top line) and 25% (bottom line), respectively. The black solid line in (d) is the average value line, and the red line is the statistical value fit line.

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