Figure 4From: Pulsed laser-induced formation of silica nanogridsPattern before and after annealing. Grid pattern generated in a 90-nm-thick SiO x film at 248-nm laser wavelength: (a) 185 mJ/cm2, before annealing; (b) 210 mJ/cm2, after oxidation to SiO2 by high-temperature annealing (1,273 K, 16 h).Back to article page