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Table 1 The resulting Cr line width as a function of exposure dose with or without beam optimization

From: Electron beam lithography with feedback using in situ self-developed resist

Line dose (nC/cm) Well focused at the center (nm) Well focused at the corner (nm) Defocused at the center (nm) Defocused at the corner (nm)
0.4 42 Resist not developed to the bottom due to beam broadening at the writing field corner, thus no Cr pattern after liftoff Resist developed to the bottom Resist not developed to the bottom
0.56 43
0.79 47
1.10 51 78 84
1.15 62 89 91
2.15 70 120 128
3.01 91 210 127 138
4.21 108 251 146 152
5.90 117 272 167 172