Electron beam lithography with feedback using in situ self-developed resist

Table 1 The resulting Cr line width as a function of exposure dose with or without beam optimization

Line dose (nC/cm)	Well focused at the center (nm)	Well focused at the corner (nm)	Defocused at the center (nm)	Defocused at the corner (nm)
0.4	42	Resist not developed to the bottom due to beam broadening at the writing field corner, thus no Cr pattern after liftoff	Resist developed to the bottom	Resist not developed to the bottom
0.56	43
0.79	47
1.10	51		78	84
1.15	62		89	91
2.15	70		120	128
3.01	91	210	127	138
4.21	108	251	146	152
5.90	117	272	167	172