Figure 5From: Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperatureTEM images (A,B,C,D) of lightly doped silicon nanowires under various concentration of H 2 O 2 . (A) 0, (B) 0.03, (C) 0.1, (D) 0.4 mol/L.Back to article page