Figure 7
From: Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask
Fabrication of line-array patterns by present method and the traditional friction-induced selective etching. (a) Present method: line-array pattern with 2.5 μm in depth fabricated by scratching under Fn = 100 mN and post-etching in HF solution for 30 min and KOH solution for 4 h in sequence. (b) Traditional friction-induced selective etching: line-array pattern with 0.54 μm in height fabricated by scratching under Fn = 70 mN and post-etching in KOH solution for 1 h.