Figure 1
From: Thermally controlled widening of droplet etched nanoholes
Schematic of the droplet etching process and AFM images. (a) Schematic of the combined droplet and thermal etching process with deposition of Ga as droplet material during 2.5-s deposition time, droplet etching up to removal of the droplet material, and subsequent thermal etching during long-time annealing. (b) 1.7 ×1.7 µm2 top-view AFM micrographs illustrating the different stages for T = 650℃. The as-grown droplets with average height of 120 nm are visible at zero annealing time ta= 0 s. At ta= 120 s, all droplet material has been removed and nanoholes with average depth of 68 nm have been formed. After ta = 1,800 s, the hole width has been substantially increased by thermal etching. (c) Color-coded perspective AFM images of the micrographs from (b).