Figure 14From: Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applicationsMeasurements of the flexibility and mechanical endurance of Ru/Lu 2 O 3 /ITO ReRAM device at various conditions. (a) Flexibility test of Ru/Lu2O3/ITO ReRAM device for various bending curvature. (b) Mechanical bending endurance of Ru/Lu2O3/ITO ReRAM device at bending radius of 10 mm.Back to article page