Figure 1
From: Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
AFM images of Ga droplets. (a) 4 × 4 μm2 AFM image of Ga droplets formed on the GaAs(001) surface at substrate temperature TS = 500°C after a growth interruption of 30 min; the profile plotted below corresponds to the line crossing a Ga droplet in the AFM image. The dotted line represents the depression measured underneath the Ga droplet after HCl etching. (b) 4 × 4 μm2 AFM image of the sample of Figure 1a after removal of Ga droplets by HCl etching. The profiles along the two directions marked on the image are shown below.