Account

Table 1 EDX data of four points (labeled a to d) in sample DH50

From: Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

Element	Point a (%)	Point b (%)	Point c (%)	Point d (%)
N (K)	44.64	44.46	59.80	56.41
Ga (K)	26.41	51.10	38.78	43.29
In (L)	28.93	4.42	1.41	0.29

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