Figure 10From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growthCross-sectional SEM images of double layer PSi annealed for 10 min with identical LPL but with different HPL porosities. ( a ) Lower porosity (HPL-1), ( b ) standard porosity (STDHPL), and ( c ) high porosity (HPL-2), showing the gradual disappearance of the inter-connection pillars in the HPL with increasing porosity.Back to article page