Figure 12From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growthDerivative of BAC of PSi double layers with 1,300-nm-thick LPL annealed for 1, 5, 10 and 30 min. The asymmetries toward the negative x-axis increase as the annealing time increases. This shows that the density of holes in the seed layer increases for long annealing times.Back to article page