Figure 8From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growthThe out-of-plane compressive strain values of the annealed double layer of PSi with 750- and 1,300-nm-thick LPL. Strain is released gradually from the layers as the annealing time increases. Similarly to the as-etched samples, a thicker LPL leads to a lower-strained stack, but strains equalize for longer annealing times.Back to article page