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Table 1 Etching conditions of all the investigated samples for the three different studies of the impact of layer thickness, annealing time, and pillars on strain and surface roughness

From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth

Parameters

Impact of thickness

Impact of annealing time

Pillars evolution

PSi stack

Monolayer

Double layer

Double layer

Double layer

LPL

HPL

LPL

HPL

LPL

HPL-1

STDHPL

HPL-2

Current density [mA/cm2]

1.4

1.4

73

1.4

73

1.4

50

73

97

Porosity [%]

30 ± 5

30 ± 5

55 ± 5

30 ± 5

55 ± 5

30 ± 5

ND

55 ± 5

ND

Etching time [s]/thickness [nm]

150/350

30% ± 5%

6/300

(I)

300/750

6/300

300/750

8/300

6/300

4/300

300/750

50/150

600/1300

150/350

900/1700

300/750

450/900

 

(II)

600/1300

6/300

    

600/1300

        

900/1700

1200/2000

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