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Table 1 Etching conditions of all the investigated samples for the three different studies of the impact of layer thickness, annealing time, and pillars on strain and surface roughness

From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth

Parameters Impact of thickness Impact of annealing time Pillars evolution
PSi stack Monolayer Double layer Double layer Double layer
LPL HPL LPL HPL LPL HPL-1 STDHPL HPL-2
Current density [mA/cm2] 1.4 1.4 73 1.4 73 1.4 50 73 97
Porosity [%] 30 ± 5 30 ± 5 55 ± 5 30 ± 5 55 ± 5 30 ± 5 ND 55 ± 5 ND
Etching time [s]/thickness [nm] 150/350 30% ± 5% 6/300 (I) 300/750 6/300 300/750 8/300 6/300 4/300
300/750 50/150
600/1300 150/350
900/1700 300/750
450/900   (II) 600/1300 6/300     
600/1300         
900/1700
1200/2000