Figure 2From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowiresPit faceting. (a, b, c,d) SEM images of the pits forming on the Ge(001) surface after 4 sputtering/annealing cycles. (e, f, g) AFM images showing the pit morphology. In the insets of (f) and (g), the FPs of the corresponding images are shown.Back to article page