Figure 2From: Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μmIntegrated electroluminescence intensity of bidirectional field effect light-emitting and light-absorbing heterojunction device (for both voltage polarities). Temperatures of T = 100 and 300 K.Back to article page