Figure 1From: Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistorJL GAA device structure in JL TFTs and TEM images for JL GAA and JL planar. (a) The JL GAA device structure and relevant parameters in JL TFTs. The positions A and A′ indicate cross section of channel. (b,c) The TEM images along AA′ direction for JL GAA and JL planar with 2- and 15-nm channel thickness, respectively.Back to article page