Figure 2From: Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistorTemperature dependence (25°C to 200°C) on I d – V g characteristics at V d = 0.5 V. For JL GAA TFTs (Lg = 1 μm (b), 60 nm (c)) and JL planar TFTs (Lg = 1 μm (a)). The Vth decreases and the SS increases with increasing temperature in both device structures.Back to article page